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200 V GaN Gate Driver

MDC901 High Performance, 200 V Gate Driver IC

The MDC901 is a non-isolated high-side and low-side gate driver with floating regulators and integrated level shifting, specifically developed to reliably drive enhanced mode GaN devices.

Key Features
  • High-side operation up to 200V
  • Output drive current up to 2 A
  • Propagation delay : 30ns
  • Slew rate capability in excess of 100V/ns
  • No gate overcharging by true floating regulators on HS and LS gate driver
  • Integrated, non-isolated level shifters with functionality to -4V
Benefits
  • Increased efficiency
  • Tunable dead-time for optimal switching match
  • Fast design-in
Applications
  • Highly-efficient server PoL converters
  • High voltage pulsers for MEMS (ultrasound transducers, MEMS switches)
  • DC-DC converters
  • AC-DC converters
  • Class-D audio amplifiers
Use Cases
  • Data & server centers
  • High quality speaker systems
  • High precision motor drives
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Block Diagram

Ordering Information

Product
Description
Package
RoHS Compliant
Status
Order
MDC901-B-EVB
Description:

Half-bridge open loop evaluation board for 200V GaN gate driver in BGA81 package

Package:
Evaluation board (BGA81)
RoHS Compliant:
Status:
In development
Available soon
MDC901-Q-EVB
Description:

Half-bridge open loop evaluation board for 200V GaN gate driver in QFN56 package

Package:
Evaluation board (QFN56)
RoHS Compliant:
Status:
Available
MDC901-B
Description:

High performance, 200 V GaN gate driver in BGA package

Package:
BGA81 (12x12mm²)
RoHS Compliant:
Status:
In development
Available soon
MDC901-Q
Description:

High performance, 200 V GaN gate driver in QFN package

Package:
QFN56 (7x7 mm²)
RoHS Compliant:
Status:
In development
Available soon