Deep R&D expertise
MinDCet is actively conducting joint research with imec on advanced GaN processes.
Gallium Nitride Design
Monolithic GaN IC & Power Transistors
Why Choose GaN over Silicon?
Faster switching speeds
For a given on-state resistance, GaN devices offer significantly lower total gate charge (eg.~10x less for 200V gain), and lower drain-source capacitance which is especially important at higher voltages.
Reduced size
For a given breakdown voltage and on resistance, GaN offers the most compact solution. Fast GaN switching allows smaller passives, reducing footprint while increasing power density.
High Reliability
Designs for harsh environments in terms of radiation or high temperature are supported using GaN and GaN-IC. At MinDCet, GaN-IC design flow has been tailored to achieve this.
Energy loss minimization
Swap your power devices with GaN alternatives and achieve higher efficiency, cut energy loss and improve overall system performance.
GaN power HEMT design is an art, mastered by over 15 years of experience with origins in lateral power MOSFET design. The performance and reliability of a power GaN HEMT is largely defined by the way it is designed, layouted and packaged. Minimizing impact of routing and interconnect is key. We achieve this through in-house developed techniques and finite-element simulations.
Some examples of our previous work include 40V, 100V, 200V, 650V and 1200V power GaN HEMTs plus 1200V power GaN bi-directional switches.
Monolithic GaN ICs combine power transistors, gate drivers, control, telemetry and protection circuitry on a single chip.
This integration allows for significantly more compact power systems. By integrating GaN gate drivers on the same die, DC-DC converters can be up to 5-10× smaller compared to package-level solutions using Si gate drivers and GaN power HEMTs.
At MinDCet, our track record with Monolithic GaN ICs include 40V, 100V, 200V, 650V and 1200V designs.
Monolithic 40V / 20A GaN Half Bridge IC
Microscope image of the GaN-IC
Industrial
Space
Aviation
Automotive
Over the years, MinDCet has built strong hands-on expertise in multiple commercial GaN processes. We collaborate with leading GaN foundries across Europe, North America, and Asia, reducing development risk and accelerating time-to-market. This global ecosystem enables us to support projects from early feasibility studies through full production, selecting the most appropriate technology node and fabrication partner for each application.
Technology: XG035 (0.35 µm), 200 mm (8-inch) GaN-on-Si
Operation Voltage: 100V to 650V
Strengths:
- Mature European process for d-mode and e-mode GaN HEMTs
- Excellent for high-frequency switching and high power density designs
Technology: G1 0.35 µm, 200 mm (8-inch) GaN-on-Si
Operation Voltage: 650V (>850V Transient)
Strengths:
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Supports both e-mode and d-mode HEMTs
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Focused on compact high-power ICs
Technology: 200 mm (8‑inch) GaN‑on‑Si (lateral GaN)
Operation Voltage: 80V, 650V
Strengths:
- Lateral GaN HEMTs designed for high breakdown voltages
- Focus on large-scale production and supply chain stability
Technology: 200 mm (8‑inch) GaN-on-Si (End of Life by July 2027)
Operation Voltage: 80V, 650V, 1200V
Strengths:
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Lateral GaN-on-Si optimized for fast switching, low on-resistance, and high efficiency
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Strong R&D and process maturity, with multi-voltage class support
Technology: 200 mm (8‑inch) GaN‑on‑Si (lateral GaN)
Operation Voltage: 40V to 1200V
Strengths:
- Advanced lateral GaN HEMT platforms with broad voltage node support (40 V to 650 V)
- Dynamic on‑resistance dispersion below ~20% across a wide temperature range (25 °C–150 °C)
- E‑mode and normally‑off HEMTs
Our public projects
1. ALL2GaN. Monolithic 100 V / 25 A GaN IC,1200 V HEMTs with an integrated gate driver, a level shifter, and a bootstrapped floating supply.
2. EleGaNT. Monolithic 40 V/20 A GaN Half Bridge IC with Integrated gate drivers and level-shifters.
3. GANIC4S. Monolithic integration of 200V GaN gate driver and power transistor switching functions.
4. SloGaN. Monolithic GaN power stage and pre-driver (GaN half-bridge with integrated drivers and protection features).
MinDCet expertise
Custom GaN Solutions
Case Study: GaN IC advantages in high reliability systems
GaN ICs enable compact, high-efficiency, and high-reliability power solutions for demanding applications, for example, downhole drilling, electric vehicles, aviation, and industrial power systems. By integrating multiple functions into a single monolithic device, GaN modules reduce parasitics, improve thermal performance, and increase power density. This makes them ideal building blocks for buck converters and active rectifiers.
GaN IC is one of our core strengths.
