Gallium Nitride (GaN) power stages and modules are gaining commercial traction across various industries. In the systems requiring increased efficiency and reliability GaN ICs are becoming more popular over traditional Silicon (Si) devices. One of the reasons for it is decreased size, which allows it to implement more functionality in a single IC. Also, it leads to shorter routing distances and reduced parasitics, especially unwanted inductances in critical switching paths, which minimizes power losses. GaN has higher thermal conductivity, which allows for more effective heat dissipation in demanding environments. These advantages benefit applications such as downhole drilling, electric vehicles, aviation, and industrial power systems.

For the purpose of ALL2GaN Project, a GaN module was developed and optimized for high-power and high-performance applications. The IC is designed with two main applications in mind, as a building block for a buck converter or an active rectifier.

Power GaN is opening new application areas thanks to its superior material properties. By integrating multiple functions into a single GaN IC, monolithic solutions can lead to higher efficiency and power density. Even with current limitations in GaN-IC technology, strong high-temperature performance has been demonstrated, with dynamic high temperature tests going up to 225°C.